New achievements of semiconductor lighting research in Tianjin University of Technology

"Ultra high brightness LED epitaxial wafer, power type chip industry and application demonstration project is mainly to solve the growth and further improve the luminous efficiency and a number of key technical problems of multi quantum well stability model of high brightness AlGaInP four element wafer industrialization, solve the bottleneck problem of the core products of domestic semiconductor lighting industry in the chain, breaking the monopoly of foreign companies.

In another development, Tianjin University of Technology semiconductor lighting R & D center patented the "high-power LED Street" won the 2011 Tianjin patent award.

The invention of the high-power LED street lamp at the same illumination conditions, can save electricity 60% ~ 70% compared with the traditional lamp, with a huge energy-saving advantages, to reduce the city night road lighting energy consumption, which has important practical significance to create a green and economical society.

It is reported that in the 2011 year of Tianjin city science and technology award, Tianjin University of Technology semiconductor lighting R & D center and Tianjin central Xinguang Technology Co. Ltd and the Institute of physics shared by Tianjin science and technology innovation special funds project -- the "super high brightness LED epitaxial wafer, power type chip industry and Application demonstration project" third-prize science technical progress of Tianjin city.