The combination of gallium nitride and graphene can be used to bend LED material

At present, many electronic and optoelectronic materials made of organic materials have good flexibility and easy to change shape. At the same time, difficult to deform inorganic compounds in the manufacture of optical, electrical and mechanical components show a strong performance. However, due to technical reasons, the two are difficult to complement each other, the excellent function of inorganic compound semiconductors are also difficult to shape the characteristics of the development of obstacles encountered.

Fortunately, the combination of gallium nitride and graphene, part of the realization of the powerful combination of this ideal goal, a deformation of the light-emitting diode (LED) material has been born. According to physicist organization network recently reported that South Korea by Seoul University Yiguizhe (transliteration) research team led by Professor Gan sik in the micro rod graphene film surface, made of a flexible and scalable LED material, which means that can display bending deformation and other LED products may be widely appeared in our life among the. Details of the study are published in the Journal of Applied Physics Letters, published by the American Physical Society (AIP).

Characteristics of ultra-thin graphene films make it become the ideal substrate material group, it has excellent flexibility and excellent mechanical strength, and has excellent physical and chemical stability in more than 1000 DEG C high temperature environment. Stable and inactive graphene surface provides a small number of nucleation sites, which is beneficial to the growth of gallium nitride on the surface of graphene.

"The microstructure and the microstructure of Gan, due to the high density of integration and excellent ability to change the color, has been widespread concern in the field of materials research. "Yiguizhe added," when they are with the graphene substrate combination, can reliably handle the mechanical deformation, to further enhance the application value. "

In order to truly use gallium nitride on graphene substrate to create a miniature LED, the team used a self invented in 2002, the catalyst free organic metal chemical vapor deposition (MOCVD). I Keitetsu said: "the key to this technology is to maintain high crystallinity in the case of doping control, so that the formation of heterogeneous structure and quantum structure and vertical alignment on the underlying substrate. "

Subsequently, the research team will be made from the GaN LED thin rod implantation of graphene surface was tested. The results showed that the LED has the ability to bend light excellent and reliable in power, even in the 1000 bending test, degradation of the luminescent properties is still not obvious. Perhaps soon, the LED screen can be folded and deformed randomly in the streets, even on our own.

This achievement is undoubtedly a major technological breakthrough, but also for the next generation of electronic and optoelectronic devices to find a large-scale, low-cost means of industrial production possible. Graphene film in the field of materials widely used, will also give birth to more powerful combination of superior materials, closer to the distance between us and the new era.

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