Panasonic releases 10000V crash voltage under the GaN power transistor

This week, the Institute of electrical and Electronics Engineers (IEEE) in Washington held the International Conference on electronic components (IEDM), the meeting, Osaka from Japan's Matsushita group released a super high voltage gallium nitride (GaN) power transistor, the breakdown voltage of more than 10000V, 5 times higher than the previous record.

New ultra high voltage gallium nitride (GaN) power transistors are widely used in industrial and electrical power systems with high voltage and low loss switching devices.

Matsushita claimed that the technology company has applied for 110 domestic patents and 69 international patents. Http://www.semiconductor-today.com/news_items/NEWS_2007/DEC_07/PANASONIC_141207.htm

Source: China Semiconductor Lighting Network