The above-mentioned person further stated that the funds raised for the high-power infrared LED project were received at the end of 2012, but the current progress is lower than expected. The company's 2013 annual report explained that at this stage, the company has combined market changes to upgrade power-type infrared epitaxy and chips and improve the product structure. Therefore, it has prudently used raised funds to introduce equipment and expand production capacity. Therefore, the progress of this project has not reached the original plan.
It is understood that the company's subsidiaries, Nanchang Xinlei Optoelectronics Technology Co., Ltd. and Xiamen Hualian Electronics Co., Ltd., both focus on the R&D and production of infrared LEDs. Xinlei focuses on infrared epitaxy and chips, while Hualian focuses on the packaging and application of infrared LED devices. The company entered the field of infrared LED early, has a full industrial chain layout from chips, packaging to terminals, and has mastered core technologies.
The above-mentioned person pointed out that high-power infrared LED mainly refers to LED devices with a wavelength of 850nm, and low-power infrared LED mainly refers to LED devices with a wavelength of 940nm.
The company stated that the company will build an infrared industry chain covering "epitaxial materials-chips-device packaging-application products". Infrared epitaxial materials are mainly internally supported in the fields of low-end remote control launch tubes and photosensitive device applications. In terms of infrared chips, through technological improvements, the technical indicators, qualification rate and business scale of 850nm and 940nm infrared chips have been continuously improved.
ANNA