Inventory 2013 LED lighting ten key words

A: OLED

OLED is called organic light emitting diode (OLED), which is based on organic semiconductor material. OLED has many advantages, such as all solid state, active luminescence, high contrast, ultra thin, low power consumption, no view limit, fast response speed, wide working temperature range, easy to realize flexibility and large area, low power consumption and so on. At present, OLED has been applied in the field of small size display, such as cell phone terminals, and the development potential in the field of large-size TV and lighting has also been recognized by the industry.

OLED, it is from 2012 officially boarded the stage lighting, although currently only a small role, but there is no small LED alternative threat.

At the April Frankfurt exhibition, Philips for the first time to show the latest OLED technology Lumiblade GL350 panel, each GL350OLED panel size of about 155 square centimeters, brightness up to 115LM.

In May 8, 2012 -11, the United States of Las Vegas lighting exhibition, Philips again exhibited a OLED mirror products, it will automatically sense the human body close to or not, the automatic OLED light source module around the adjustment intermediate have become dark mirror effect. Successful integration of the concept of intelligent lighting and OLED together.

As the global lighting market leading brands Philips, OLED on the mean very obvious.

However, the application of OLED in the field of lighting, light effect is a small test. In the display area of OLED brightness of 100 - 300cd/cm2 can be applied, but in the course of lighting, brightness should be at least 1000 - 3000cd/cm2. The next few years, OLED and LED in the field of lighting in the rate of change, will depend on the progress of the OLED light efficiency.

Two: PSS

PSS (Patterned Sapphire Substrate), which is grown on sapphire substrate by dry etching mask, the mask patterned by standard photolithography process, using ICP etching etching sapphire, and remove the mask, then the growth of GaN material in the material, the GaN longitudinal development into horizontal. On the one hand, can effectively reduce the bit dislocation density of GaN epitaxial material, thereby reducing the active area of the non radiative recombination, enhance the internal quantum efficiency, reduce reverse leakage current and improve the life of LED; on the other hand, the active region of the light emitted by the GaN and sapphire substrate interface, multiple scattering changes exit light reflection angle LED, increase the light flip probability from the sapphire substrate, thereby improving the light extraction efficiency.

Therefore, PSS a time to become an extension of the main manufacturers competing to enhance the brightness of the mainstream technology, the rapid popularization of the second half of 2013 PSS has accounted for nearly 80% of the world's LED sapphire substrate.

While the first half of the time, sapphire substrate flat film prices fell into the trough, the substrate manufacturers generally into a loss. The PSS because of strong market demand, a time when the market price of more than 2 times more than flat film to attract sapphire substrate overweight deployment, hoping to break through the plight of revenue losses. However, with the new capacity gradually put into use, the price of PSS is also an alarming rate of decline.

While some manufacturers have now considered the use of more advanced nPSS technology, nPSS pitch less than 1um, brightness can be increased by 3% to than PSS. The imprint of the cost of more than 1 dollars lower than the etching, stability and consistency of performance is also better. Look forward to rely on PSS to save the decline of the substrate factory I am afraid again disappointed, but the path of technological progress who can guess?

Three: non sapphire substrate

In addition to the successful commercialization of SiC CREE substrate, people have become accustomed to the substrate material is sapphire. However, in 2013, the first time the sapphire substrate program on the status of the sapphire substrate has launched a challenge.

The most threatening challenge from the silicon substrate, January 12, 2013, OSRAM promotion in the silicon 150mm successfully grow GaN extension, cut into 1mm2 brightness in 350mA can reach 140lm, the project is partly funded by the German Federal Ministry of education and research of the "Si Gan" project.

Toshiba's move faster step, in 2013 12 months, was not involved in the direct selling Toshiba LED package, and the chip is used with the United States Prichard (Bridgelux) cooperative growth of LED chip in 8 inch silicon substrate. Toshiba released a total of four current product specifications, including a color temperature 3000K, a color temperature 4000K and two color temperature 5000K LED products. When the typical forward voltage is 2.9V, the 350mA drives the color temperature 5000K, the color rendering index is 70 of the model is TL1F1-NW0 LED, the light efficiency reaches 110lm/W.

China manufacturers latticepower after years on the silicon substrate in the field of work, launched in 2013 more than 120lm/W luminous efficiency of silicon based high power LED chip products, the desire for independent intellectual property rights of the domestic chip is a great good news.

In 2013 twelfth major invention of information industry technology Chinese Ministry announced the selection results, latticepower (Jiangxi) Co., Ltd. "GaN / Si LED materials and high power chip technology" project was awarded the invention of major technical information industry, and included in the "Electronic Information Industry Development Fund Project Guide", enjoy the project funds of national electronic information industry development fund to support.

GaN Homoepitaxy is not a sign of weakness, in July 3, 2013, Seoul released the first global semiconductor "npola", the single brightness reached 500lm, Dr. Nakamura Shuji made a special trip to Seoul to go to the conference site. The village of Dr. SORAA to participate in the establishment of the company is a forward-looking GaN