High brightness MvpLED introduced Xuming new debut

1, Gan LED is widely used in handheld devices, backlight module, camera flash and a large outdoor full-color display, but the traditional sapphire substrate for the mainstream of GaN based LED structure, the brightness of the output is insufficient, its application in solid state lighting market is limited. This is mainly due to the poor thermal management of the LED and the high power chip operation when the load is not high current input. Generally speaking, the LED epitaxial layer is grown on different substrates such as sapphire substrate or silicon carbide substrate. However, due to the poor conductivity and thermal conductivity of the sapphire substrate, the cost of the silicon carbide substrate is relatively high, so the gallium nitride LED is produced on the conductive and thermal conductivity of the metal base, these problems can be overcome. The leading technology developed for SemiLEDs vertical metal base, MvpLED Xuming development (metalverticalphotonLEDs), is a low cost production process, the use of innovative vertical design and advanced metal alloy layer. This kind of LED emitter and the traditional sapphire substrate type LED or flip chip packaging LED, has many advantages and has the best luminous efficiency of LED when driving current 350mA.

2, a variety of LED grain type comparison:

Gallium nitride LED, LED type and MvpLED type are the common types of LED in traditional sapphire substrate. For the traditional LED type Gan sapphire substrate, the sapphire substrate is not conductive, it must be p type and N type electrode is made on the same side, making n type electrode by etching, P type gallium nitride quantum well structure light-emitting area and etching, therefore, it can be used in the light emitting blocks, so less nearly 20-30%. In addition, the current transmission of traditional Gan LED sapphire substrate, from the cathode to anode for horizontal flow, at this time, under the current easy n type electrode produces a current crowding phenomenon, resulting in operating voltage rise and increase the dynamic resistance and increase the temperature of the components. There are characteristics of a well-known, because the basic characteristics of P type gallium nitride material, current cannot be spread on top, so the traditional P type Gan Gan on sapphire substrate LED is necessary to increase the production of transparent electrode layer to help current distribution but making transparent electrode layer can absorb light, reduce brightness. Furthermore, the conductivity of sapphire substrate is low (35W/mK), so the heat transfer efficiency is poor, only suitable for small current operation. For flip chip type Gan LED, like the P type and N type electrode is made on the same side, like the light emitting region will reduce the current transmission direction is horizontal flow, there is still the current congestion caused by the phenomenon of the increase of dynamic resistance. Moreover, because of the method of the cladding is made by welding, the thermal conductivity is smaller than that of the direct metal substrate MvpLED.

3, SemiLEDs vertical metal base MvpLED technical advantages:

With unique patent application Xuming epitaxy in heavy stains technology, this technology is the LED growth of the extra structure on the sapphire substrate, the structure of the sapphire substrate can be removed. After LED is formed in the metal layer on the surface of n-GaN, also making patterns to overcome the total reflection loss of GaN material inside, increase light extraction efficiency. Vertical type metal layer MvpLED technology overcomes the traditional SemiLEDs efficiency type and flip chip type problems, for example, the first point, this technique does not need anything to remove a n type electrode pin, with the grain size, the traditional type of sapphire substrate gallium nitride LED compared to the light the area is larger. Second, because the power in the vertical direction through the assembly and greatly reduce the dynamic resistance, and current aggregation can also be avoided. Furthermore, because of the N type Gan itself has good conductivity, without making a transparent electrode layer, still has good current distribution, so there is no light absorbing transparent electrode and reduce the brightness of the light output can be plagued with high brightness. Third, due to the vertical metal base MvpLED metal base has a high thermal conductivity, so the vertical metal base MvpLED thermal conductivity is very good. Fourth, vertical type metal base MvpLED the light direction for single direction, upward injection, while the traditional type of sapphire substrate Gan LED the light direction there are six oriented to injection, so no matter in overcoming all reflection effect of light on the package or grain will effect the light collection of vertical metal the MvpLED has the best light extraction and light collection efficiency, achieve best light. Based on the above mentioned, the vertical metal substrate MvpLED can be used to achieve high working current and high power operation in the application of solid state lighting.

4, the advantages of MvpLED components:

According to the comparison of thermal conductivity of different substrate, compared with the general commercial grain base currently used, sapphire, silicon, germanium, gallium nitride, silicon carbide plate, MvpLED metal layer has a relatively high rate of heat conduction, the heat dissipation capability of the display has more. Xuming MvpLED technique has been used in vertical metal base in 15mil, 24mil, 28mil, 40mil, 60mil with different grain sizes.

5, excellent operating characteristics of MvpLED components:

Comparing the current - Gan vertical metal layer MvpLED and conventional sapphire substrate LED voltage (I-V) curve, when driving forward bias current of 350mA, the vertical type metal layer MvpLED forward voltage than the type Gan sapphire substrate LED forward voltage 0.2V. The slope of the curve can be found that the vertical metal base