Graphene can reduce the cost of Blu ray IBM investment 18 billion 300 million LED

Almost all of the world's semiconductor technology research institutions are trying to make graphene (graphene), which is regarded as a new generation of IC material is better than silicon; but now IBM researchers found another advantage of graphene materials can significantly reduce the use of gallium nitride (GaN) manufacturing cost of Blu ray LED.

The wafer size graphene we have formed in the silicon carbide wafer on a single crystal GaN film; "self proclaimed" inventor "members of the IBM T.J. Watson Research Center Jeehwan Kim said:" then the whole piece of GaN film is transferred into the silicon substrate, graphene is still in SiC wafer repeat use continue to grow GaN film, transfer film program. "

He pointed out that, rather than using expensive SiC or sapphire wafer, and only a single use to grow the traditional way of GaN films, the cost benefit of this new method is much higher, but they found that the quality of the film by new method in graphene grown on the film grown by other, higher than the base plate (low defect density).

To grow graphene film wafer size very challenging to manufacture IC semiconductor components using graphene, experts have tried many different ways in the past, but only partial success; currently found by SiC, and then a silicon wafer is vaporized, is one of the most reliable method.

IBM and Kim confirmed that the silicon wafer after vaporization of SiC, graphene films are left to safely transfer to the silicon substrate; in addition, they also confirmed that the quality of the output of graphene, graphene quality is better than the direct growth on a wafer using graphene on.

As for other films grown on graphene, and opens up a new way for the application of this kind of material will be Kim; he developed a technique called "growth of high quality single crystal GaN films on epitaxial graphene directly on the van der Waals epitaxy (direct van der Waals epitaxy)". He claimed that in this way, the growth of GaN film or other thin film, can be transplanted to any kind of substrate, supporting the manufacture of components such as.

The Kim laboratory with the method making use of GaN film is successfully reused SiC graphene wafers grown, they think this is a new way which can greatly reduce the manufacturing cost of semiconductor components using graphene: "we first confirmed single crystal thin film can grow wafer size on graphene, and graphene can in addition to recycle; our research results also for the growth of high quality single crystal semiconductor element in Shi Moxi provides a general rule. "

The silicon wafer after vaporization of SiC, can be stripped out of graphene, and transfer to any kind of substrates, such as silicon. Because in the film peeling on the growth, the integrity of the graphene layer has not been damaged, Kim also try other types of semiconductor components in the perfect crystal growth of graphene on the substrate, and then transferred to other places, such as the flexible substrate; he said that this technology has a chance to the birth of a high frequency transistor light detectors, biological sensors and other "post silicon era" component, IBM has been in the next five years to invest $3 billion (about 18 billion 375 million yuan).

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