Epitaxial wafer process for growing LED organic layer

Epitaxial thin films of LED organic layers were grown by vapor phase epitaxy (VPE), liquid phase epitaxy (LPE), metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). The materials of their growth of LED organic layer were CaAsp, GaP, GaP, GaAlAs, InGaAlP, InCaN, ZnSe and so on.

Vapor phase epitaxial film is relatively simple, often after the epitaxial film growth to be made by the diffusion method of PN junction, so the efficiency is low.

Liquid phase epitaxial wafer growth furnace has been able to 60-100, the production efficiency is high, the grain reuse cost has been reduced very low, is used to manufacture high brightness GaP green light emitting device and the general brightness GaP red light emitting device, it can also be used for manufacturing high brightness GaAlAs light emitting device.

Metal organic chemical vapor deposition (MOCVD) is the main method to produce high brightness InCaN blue, green and red, yellow LED InCaAIP LED, which can accurately control the thickness, and composition of precision control layer of the epitaxial wafer. This method can be used to produce the 20 layers of the quantum well layer and the DBR reflection structure, which is needed in the ultra high brightness LED structure, and it is also suitable for mass production. It is the main method to produce ultra high brightness LED.

Molecular beam epitaxial wafer is mainly used for the preparation of ZnSe light emitting diode, the effect is very good, the epitaxial layers can be grown less than 10A, to determine the number of growth is slow, about 1mm per hour, loading capacity is small, the production efficiency is relatively low.

Source: Ledinside