Dow Corning SiC development from the U. S. naval support

In December 11, 2007, the Dow Corning compound semiconductor solutions (DCCSS) business department won the U.S. Naval Research Laboratory (Office of Naval Research) a $4 million 200 thousand contract to develop SiC material technology. The contract is a continuation of the previous $3 million 600 thousand contract (December 2005), allowing DCCSS to continue to improve its ability to manufacture 100mm diameter, device quality SiC substrates. With the federal funds and Dow Corning manufacturing experience will accelerate the development of SiC substrate market.

Dow Corning said, in the first phase of the project, all the main goal has been reached, SiC technology has been significant progress, hope that the second stage and the subsequent stage will help to further improve the quality and reduce the cost, for better performance, the price is much more acceptable and more energy-efficient SiC products listed pave the way. The ultimate success of SiC technology depends not only on raw materials, but also on additional research and system development. This project provides an ideal platform for the government, leading research institutions and business organizations to cooperate, share resources, improve technology.

Research from Dow Corning 2003 acquisition of SiC Semiconductor company has been the pioneer -Sterling SiC technology. With the 2004 DCCSS business was born, the Dow Corning manufacturing base in Auburn, Mississippi, opening up, development of SiC technology is in the base of. (http://compoundsemiconductor.net/blog/2007/12/dow_corning_compound_semicondu.html)