SiC substrate crystal quality improved SiC substrate Market CREE occupy a high share

Manufacture of SiC power components indispensable SiC substrate (wafer) in the quality of continuous improvement. Not only is the current mainstream diameter of 4 inches (100mm) products, (150mm) products are less and less crystal defects.

CREE (CREE) high share in the SiC substrate on the market, from the company in the SiC international society of "ICSCRM 2013" (from September 29, 2013 to October 4th in Miyazaki, Japan held) published content, as of 2013, the power element for microtubule density 6 inch products in 1 /cm2 below the average level of 0.5 a good /cm2, can reach 0.01 /cm2. It is estimated that the use of this high-quality 6 inch substrate to produce 10mm square power components, the pass rate of up to 98.7%.

For example, the diameter of the substrate is 4 inches (), and the density of the substrate surface dislocation (BPD) is demonstrated. According to CREE, the 4 inch substrate substrate dislocation density of 56 /cm2. Within the range of 17% of the substrate, the dislocation of the substrate is in the range of less than 5 in the range of 78%.

It is reported that the density of the basal plane dislocations will be reduced to 2 /cm2 when the substrate thickness is about 56 /cm2, and the thickness of the substrate with a thickness of is about 60 M.

In addition, compared with the original one, it can also reduce the density of the through screw dislocation (TSD) of the SiC substrate used in power components. The density of the threading screw dislocations of the bare substrate and the epitaxial substrate (the layer of the epitaxial epitaxial layer) were 955 /cm2 and 837 /cm2, which was reduced to about half of the /cm2 and the 429 /cm2, which was reduced by about half.

Not only is the power element with the SiC substrate, CREE is also engaged in LED and high frequency components using SiC substrate business. LED substrate with respect to the 6 inch product of the crystalline defect density in 2010 was 8 /cm2, by the year 2013 has been lower than the 2 /cm2.

High frequency components with the substrate, the 6 inch product of the current density of microtubules is 0.14 /cm2. This level of 7mm square in the production of high-frequency components can achieve 96.3% of the yield.