China's LED industry is relatively meager profit from the development of the industrial chain in the middle and lower reaches of the strength of the ah, the strength of the upstream equipment and chip links has been the majority of the domestic LED industry in the hearts of pain. Over the past few years, the domestic LED upstream enterprises through a series of independent scientific and technological innovation, and foreign enterprises in the process of continuous struggle, and gradually grow up.
On the one hand, the localization of MOCVD equipment to break the monopoly of foreign enterprises. For a long time, as the key equipment in the production of LED chips, MOCVD equipment market has been occupied by European and American enterprises. Equipment is imported, the operation of equipment engineers are hired to, once the loss of personnel, the enterprise almost no technology accumulation. Obviously, this kind of business model in the market is really good when you can make some money, and the market is not good, natural unsustainable. So, domestic equipment is the carrier of China's LED technology innovation, China's LED industry in order to further development, must be made to support domestic equipment. To this end, the semiconductor lighting technology development in 12th Five-Year special plan proposed to achieve large-scale MOCVD equipment and the localization of key supporting materials.
At the end of last year, the good news from Guangdong, Zhao Xin photoelectric lidar enterprise MOCVD equipment localization continuously came. With independent intellectual property rights MOCVD equipment localization success, that the relevant technology has long been the situation of foreign monopoly will be broken, the domestic LED independent industrial ecological chain will be more perfect.
However, many industry insiders began to worry about the living space of domestic MOVCD equipment: after a round of frenzied procurement, and suffered a sluggish market, the new disc manufacturers are thought to customize the extension of the new MOVCD device? Born Under A Bad Sign based on how the domestic equipment in the fierce competition in the market? According to the latest market research data, with the rapid development of LED lighting applications, is expected in 2013 the domestic demand for MOCVD devices in 300 or so, and the next 3-5 years, the demand will surge to 3000 units. Therefore, Born Under A Bad Sign is not correct, the market space is not a problem, the key is the domestic equipment manufacturing enterprises to do the planning, step by step, the expansion of production and sales of foot.
On the other hand, the domestic LED epitaxial chip companies from 2000 3-5 home, the development of the more than and 30 and in 2012 the 70-80 home in 2009. After several years of accumulated technology, China's silicon based high power LED chip finally succeeded in mass production, not only has a great leap in the film size, and luminous efficiency from early small size chip 90lm/W increased to more than 120lm/W, with vertical structure, good heat resistance, high current density, simple structure etc. the advantages, and has been successfully used with lights, bulb lamp, flashlight, headlight lamp and other indoor and high-end lighting products. Up to now, the domestic silicon based high-power LED chip luminous efficiency has reached 130lm/W, with the world's leading chip.
It is well known that the difference between the lattice constant and the thermal expansion coefficient of the silicon substrate and the GaN material directly affects the quality of the chip. Domestic enterprises through the graphical substrate, the use of AIN and AlGaN multilayer warm stamping layer and other ways to introduce the pressure inside, to reduce the gap between the silicon substrate and GaN, thereby eliminating the epitaxial layer of cracks. Relative innovation technology has been applied in several countries and regions. And the complete independent intellectual property rights of silicon based LED chips, will take a good walk along the sapphire substrate, silicon carbide substrate outside the third semiconductor lighting technology to lay a solid foundation. The large-scale application of silicon based LED technology will highlight the production efficiency advantage and cost advantage of mass production. In particular, a new generation of silicon based high-power LED chips, will further enhance the performance of LED lighting products, reduce the cost of LED lighting products, to speed up the LED lighting products into the tens of thousands of families have milestone significance.
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