High voltage MOS out of chip vendor grab push high integration LED driver

Semiconductor industry to develop highly integrated light emitting diode (LED) lighting driver IC program. In the high voltage metal oxide semiconductor field effect transistor (MOSFET) under tight capacity, LED lighting system is facing the dilemma of deferred delivery business, so the chip manufacturers are stepping up: integration of high voltage MOSFET LED lighting driver IC scheme, make LED lighting system customers from high-voltage MOSFET stock out of suffering.

NXP regional marketing director Wang Yongbin said, resonant controller and non dimming dimming LED driver IC and LED lamps are high voltage MOSFET, so through high integration LED NXP IC driver program to ensure customer master supply without fear.

NXP (NXP) regional marketing director Wang Yongbin said, in 2013, LED lighting market will flourish, although at present the LED lighting system because developers have a serious shortage of high voltage MOSFET, and has many orders cannot be shipped into a dilemma, difficult in the market big Shi fist.

In order to avoid the high voltage MOSFET supply shortage affecting the market expansion schedule, including NXP, STMicroelectronics (ST), Bauer Indira Te (PI) and other chip manufacturers, have launched integrated high voltage MOSFET LED lighting driver IC program, to ensure that customers of LED lighting products shipped without fear, also took the opportunity to grow in LED lighting driver IC market layout.

NXP Greater China Lighting Products Market Manager Zhang Weichao pointed out that for the production of integrated high voltage MOSFET LED lighting driver IC, must have high pressure process, however, due to high technology threshold is too high, not all of the wafer providers are able to develop, so the expected lack of goods in this wave of unrest, fear will appear LED lighting driver IC the trend of decline of the influence of supplier.

To push the flag high integrated LED driver IC market, Wang Yongbin stressed that the original NXP has SOI-HV high voltage process into the ABCD3 process is more suitable for LED lighting applications, 2013 is expected to start mass production, the process is not only more suitable for the integration of high voltage MOSFET, and can reduce the leakage current at the same time, save LED lighting applications the necessary function, the energy output of more cost-effective LED driver IC.

In addition to strengthen high pressure process technology, now only STMicroelectronics, Toshiba (Toshiba) and Torgovnik Infineon (Infineon) high voltage MOSFET and a few other manufacturers, so as to ensure the smooth development of high integration, NXP has also been prepared well.

Zhang Weichao said, the second half of 2012 estimated NXP LED lighting market will rapidly expand, therefore has the advance to the high-pressure MOSFET industry products, to ensure that customers can be present in six to eight weeks to obtain the high degree of integration of LED lighting driver IC program, the future will be reduced to three to four weeks to pick up. In addition, NXP also plans to invest in high pressure MOSFET manufacturers to grasp more stable sources of supply.