Deal with the large demand for automotive lighting MITSUBISHI chemical expansion GaN substrate capacity

Nikkei BP news MITSUBISHI chemical will increase the production capacity of high power LED substrate with GaN. The company is currently in Ibaraki county is located in the Tsukuba and Japan enterprise located in Okayama County, the cause of producing Mizushima GaN substrate, the Tsukuba will cause the production rose to 2 times the original, but the company did not disclose the specific capacity. Expansion is now under construction, the new production line plans to put into operation in 2015. MITSUBISHI chemical production of GaN substrate is due to the need for high power LED lighting and automotive headlights and other expansion.

As a white LED based blue LED chip is generally the use of low price sapphire substrate production. However, the blue LED is composed of GaN semiconductor, lattice constant and thermal expansion coefficient is very different from the sapphire substrate, so the use of sapphire substrate to make crystal defects, it is difficult to achieve high output power. The GaN substrate is not prone to this problem. As a result, high power LED has emerged with the trend of GaN substrate production. It can be said that the MITSUBISHI chemical production GaN substrate, proved the use of GaN substrate LED demand has increased.

However, the current GaN substrate products are called HVPE (hydride vapor phase epitaxy) of the gas phase method, the higher the price. As a result, MITSUBISHI has been committed to the development of high quality GaN substrates which are expected to be at low cost by the liquid phase method. The goal is to start mass production within 2015 years using liquid phase GaN substrate.

MITSUBISHI chemical's main GaN substrate is a diameter of 50mm (2 inches) of the product. Larger diameter 100mm (4 inch) product is currently sample supply.

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