SiC substrate manufacturers have announced support for 6 inches product

SiC wafer (substrate) about the cost and performance of SiC power devices. Can be seen on the ICSCRM, a lot of SiC substrate manufacturers are in the hands of the development of 6 inch diameter (150mm) products. The maximum diameter of the power element SiC substrate is 4 inches (100mm). Increasing the diameter to 6 inches is helpful to improve the production efficiency and reduce the cost of SiC power components.

Estimated to be able to put the first 6 inches of the product is the largest market share of the United States CREE. The company's goal is to supply the sample in 2011, in the current ICSCRM, announced its 6 inches to reduce the work of the hollow through the defect is being carried out smoothly. The company is not only the production of power components, but also the use of SiC substrate manufacturing blue chip LED. Therefore, even if the substrate has a plurality of crystal defects in the SiC substrate than the power element, the use of the substrate can be obtained. In other words, the company has a 6 inch SiC substrate for the LED, and gradually improved, and then used to power components advantage.

In addition to CREE, there are many manufacturers are developing 6 inch products. For example, Nippon Steel Corporation and Dow Corning company, the two companies in 2012 as the target sample supply. In addition, the United States Erlu (II-VI) presented the 2013 sample delivery target.

From the above, a lot of SiC substrate manufacturers have turned to develop 6 inch products. The diameter increased to 6 inches, although it can improve the production efficiency of the SiC power components, but the increase of crystal defects will lead to lower yield. Therefore, the realization of large aperture 6 inches in crystal quality maintain the current 4 inch products, will be a watershed in the decision of victory.