Nobel laureate Amano Hiro challenge to focus on nanowire LED

The winner of the Nobel prize for physics, Tian Hao, was awarded the medal of honor by the Japanese government in October 24, 2014 and held a press conference at the Nagoya University where he served. Tian Tian at the meeting in response to a reporter's question in the form of the introduction of their ongoing research.

In these studies, the emphasis on the importance of power device applications. This is because compared with the Si, GaN band gap, high thermal conductivity, with the characteristics of power devices, is expected to play a good energy-saving effect.

Tian Tian said with confidence: "nitride semiconductor applications are not just LED, I am particularly concerned about the power device. LED makes a contribution to energy saving, power devices will also greatly promote energy efficiency, such as power transistors. Although Si achieves a power conversion efficiency of up to 95%, there is still a loss of up to 5%. The GaN theory can reduce the loss to below 1/6. There are also expected to play more than LED of energy efficiency. We are also developing ultra low power consumption power devices. Power devices, from now on is the critical moment. In the field of GaN power devices, I think Japan is now in a leading position in the field of hope to lead the development of the world".

Deep UV LED

Tian Tian also introduced in LED and semiconductor lasers and other light-emitting devices in the field of initiatives. LED is studying the use of a large number of periodic nano GaN line to set up the nanowire structure, improve luminous efficiency. In this structure, each line can be used as LED light, which is helpful to enlarge the luminous area and improve the luminous efficiency.

In addition, the study of deep UV LED is only about 250nm ~ 350nm. The LED is also expected to be used in the printing field in addition to sterilization. The UV light source used in the printing field is limited. Therefore, the use of polymer materials such as printing ink need to cooperate with the wavelength to develop, both time-consuming and laborious. The LED easy to adjust the wavelength, according to the characteristics of the polymer to select the wavelength of UV LED, which can make the development easier.

Realization of red laser using GaN semiconductor

Not just LED, Tian Tian also gave attention to the new semiconductor lasers. GaN type semiconductor LED current density is too large when the luminous efficiency of the decline in the phenomenon of light efficiency decline". The semiconductor laser does not have this phenomenon, the greater the current, the greater the brightness, the higher the efficiency. So in the light of the use of semiconductor lasers also caused concern.

Laser lighting is expected to be used for car headlights. Although some models have been used in the laser headlights, but the temperature characteristics of the subject remains. Therefore, Tian Tian is doing research on this subject.

In addition to the use of lighting, the field is still studying the display of the semiconductor laser, he studied the use of GaN semiconductor red laser. Although the display with a red semiconductor laser has existed, but in the HUD and other automotive purposes, "temperature characteristics are not enough" (Tian Ye). As a result, Tian Tian hopes to use GaN semiconductor to solve this problem.

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