Nakamura Shuji: laser lighting or into the next generation semiconductor lighting

November 11, 2013 afternoon, the Tenth China International Semiconductor Lighting Forum (CHINASSL2013) officially kicked off. In the opening ceremony of the forum link, one of the global semiconductor lighting Award for outstanding contributions to the blue, green and white LED inventor, University of California-Santa Barbara Professor Mr. Nakamura Shuji made a speech entitled "excellent report next generation of semiconductor lighting" for the guests and delegates.

Nakamura Shuji first compared to the first generation LED and second generation LED, is the first generation in silicon carbide and silicon substrate LED, and the second generation of LED is based on GaN substrate, two compared with the second generation LED GaN base than the first generation has been greatly improved, such as the electric current density and temperature are great improvement. "In terms of performance, we use non polarized and semi polarized way to study, and in 2007 there is a greater breakthrough, you can achieve a 50% reduction in cost, the luminous rate increased by 50%. "

Nakamura Shuji further said that the crystal gallium nitride substrate with no previous defects, not only can improve the current density, but also can make the heat increased from 0.4% to 0.5%, so the Gan as substrate LED will be more bright. In addition, with Gan can reduce the number of LED, make a very beautiful point source, and can reach the level of 75W halogen lamp, and the input power is only 12W, "we also called the laser light, the future will be very promising, the main reason is that the laser light, the efficiency is very high, the current efficiency is 10 ~ 100A/cm2, and the chip is very small. "

Finally, Nakamura Shuji stressed that LED is better than Gan sapphire substrate, and the cost is decreased, which can meet the requirements of the existing LED technology, the current density can be increased by 10 times higher than before, the quality of lighting. At the same time, the use of Gan can also be used to improve the efficiency of the non polarized and semi polarized plane. "The next generation of semiconductor lighting may be laser illumination, although there is no large-scale use, but the LED lamp and the laser light, decrease the efficiency of small, increase in the current density, so the laser lighting will be a development trend in the future. Nakamura Shuji said.