LED substrate Industry Report: downstream boom driven upstream construction

LED is one of the most promising lighting solutions, its application will scale with lower cost and rapid growth. LED as the latest generation of light source lighting in the power consumption, service life and heat of the three main indicators are the first in all types of light sources, but the highest cost, and the service life is still unstable.

LED substrate selection includes substrate and epitaxial film structure, material preparation, the degree of difficulty and cost, the substrate and the epitaxial film, chemical stability, substrate and epitaxial film of the thermal expansion coefficient, etc.. The combination of red, yellow, and sapphire substrates for gallium arsenide substrate & four element materials and the blue and green combination of sapphire substrate and gallium nitride is the best commercial LED substrate and epitaxial combination.

As the choice of substrate material of four element system of red and yellow LED, GaAs has obvious advantages. The chemical properties of GaAs are very stable, and the lattice match of the four element material is good. On the other hand, GaAs itself is also very important semiconductor materials, in terms of manufacturing costs and manufacturing dimensions are obvious advantages. At present, the production of low resistance GaAs substrate is still dominated by Japanese manufacturers, but the domestic manufacturers in the Department of crystal power, in the past two years in the field of low resistance GaAs chip manufacturing has made great progress.

Sapphire substrate is currently the mainstream choice for GaN growth. Its advantage lies in the mature manufacturing technology, low cost, but low internal quantum efficiency. In addition, the characteristics of the insulator can only determine the lateral structure, the working current caused a lot of restrictions. Another heat dissipation is also poor. Domestic plans to invest in sapphire substrate production of listed companies, including crystal optoelectronics and Tong Tong shares.

SiC is another substrate choice for GaN industrial growth. The utility model has the advantages of good conductivity, good thermal conductivity, no visible light absorption, etc.. However, due to the limited nature of the heterojunction, it can not escape the limitation of droop effect under the condition of high current. SiC substrate price of ten times more than sapphire substrate. Listed companies Tianfu Thermoelectric shares of the domestic leading SiC manufacturers jointly. In terms of performance, it is the best choice to produce blue-green LED directly on GaN substrate. This can fundamentally eliminate the lattice matching problem. But the cost is still too high to achieve the commercialization of obstacles. We are optimistic about the future growth of the LED substrate industry. We are optimistic about the sapphire substrate equipment manufacturer Tianlong optoelectronics, and other related listed companies concerned.