LED giants have aimed at 6 inch SiC wafer Market

Recently, a SiC power semiconductor international society of "ICSCRM 2013" in Miyazaki, Japan held. In the exhibition hall, a number of SiC substrate manufacturers show the diameter of 6 inches (150mm) wafer. This wafer is currently 3 to 4 inches (75mm ~ 100mm) wafer next generation products. CREE has been the first supplier of 6 inch wafers, but it is estimated that followed by the SiC substrate manufacturers in the second half of 2013 will be officially launched in the second half of 2014.

The substrate quality of praise the NSSC has started to provide 6 inch wafer samples to mass production in 2014 delivery. Intended supply of bare wafers and epitaxial wafers for epitaxial film formation. The company said that its 4 inch (100mm) wafer quality, including the poor row defect density, have reached a very high level, the 6 inch wafer is also to reduce defects to catch up". The Nippon live Nintaus aimed at the next 6 inch wafer market expanding trend, "discuss the need to own the epitaxial film forming ability".

In addition, the parent company of NSSC is past the Nippon Steel and Sumitomo metal, metal Sumitomo until SiC crystallization solution based on the method of growth in the development of technology. Therefore, NSSC is simultaneously developing solution and (the original Nippon Steel Development) two kinds of sublimation technology.

Rohm's SiCrystal company will be in the end of 2013 to March 2014 production volume of 6 inch wafer. SiCrystal's sales agent said, SiCrystal did not develop epitaxial wafers, but focus on how to supply high-quality bare wafer. As a result of the rapid development of the SiC wafer by Rohm to assess the system, therefore, can be obtained as soon as possible substrate quality feedback, thereby promoting quality improvement".

Showa electrician in September 30, 2013 has announced the establishment of the diameter of the 150mm epitaxial crystal production technology. The company has provided samples of the wafer from the beginning of 2013, will be available from the beginning of October. Plans to provide only n epitaxial wafer, before and after 2015 to provide P epitaxial wafer.