Inventory 2012 LED lighting technology ten key words

Keywords: OLED

OLED (Organic Light-emitting Diodes), Chinese name for the organic light emitting diode, light emitting diode based on organic semiconductor materials. OLED has many advantages, such as all solid state, active luminescence, high contrast, ultra thin, low power consumption, no view limit, fast response speed, wide working temperature range, easy to realize flexibility and large area, low power consumption and so on. At present, OLED has been applied in the field of small size display, such as cell phone terminals, and the development potential in the field of large-size TV and lighting has also been recognized by the industry. OLED has been regarded as one of the most promising display and lighting products in twenty-first Century.

And OLED, it is from 2012 officially boarded the stage lighting, although only a small role, but there is no small threat to replace LED.

At the April Frankfurt show, Philips Lumiblade OLED GL350 first display panel of the latest technology of OLED, each GL 350 OLED panel size of about 155 square centimeters, brightness up to 115LM.

Photograph: LEDinside

In May 8, 2012 -11, the United States of Las Vegas lighting exhibition, Philips again exhibited a OLED mirror products, it will automatically sense the human body close to or not, the automatic OLED light source module around the adjustment intermediate have become dark mirror effect. Successful integration of the concept of intelligent lighting and OLED together.

Photograph: LEDinside

As the global lighting market leading brands Philips, OLED on the mean very obvious.

But OLED used in the lighting field, the light effect is not a small test. In the field of OLED display brightness reached 100 ~ 300cd/cm - can be used, however in the way of lighting, brightness will reach at least 1000 ~ - 3000cd/cm. The next few years, OLED and LED in the field of lighting in the rate of change, will depend on the progress of the OLED light efficiency.

Keywords: PSS two

PSS (Patterned Sapphire Substrate), which is grown on sapphire substrate by dry etching mask, the mask patterned by standard photolithography process, using ICP etching etching sapphire, and remove the mask, and then on the growth of GaN materials, the longitudinal development of GaN material into transverse. On the one hand, can effectively reduce the bit dislocation density of GaN epitaxial material, thereby reducing the active area of the non radiative recombination, enhance the internal quantum efficiency, reduce reverse leakage current and improve the life of LED; on the other hand, the active region of the light emitted by the GaN and sapphire substrate interface, multiple scattering changes exit light reflection angle LED, increase the light flip probability from the sapphire substrate, thereby improving the light extraction efficiency.

Source: LEDinside

So PSS for a time to become a mainstream technology extension manufacturers competing by improving the brightness, the rapid popularization of PSS, to the second half of 2012 has accounted for nearly 80% of world LED with sapphire substrate.

When and the first half of the year, prices fell to a low flat sapphire substrate, the substrate manufacturers generally fall into a loss. The PSS because of strong market demand, a time when the market price of more than 2 times more than flat film to attract sapphire substrate overweight deployment, hoping to break through the plight of revenue losses. However, with the new capacity gradually put into use, the price of PSS is also an alarming rate of decline.

Source: LEDinside

And some now consider Dachang with more advanced nPSS technology, nPSS pitch to 1um, the brightness can be increased by 3% to 10% more than PSS. The imprint of the cost of more than 1 dollars lower than the etching, stability and consistency of performance is also better. Look forward to rely on PSS to save the decline of the substrate factory I am afraid again disappointed, but the path of technological progress who can guess?

Keywords: non three sapphire substrate

In addition to except CREE successful commercial SiC substrate, people have been accustomed to the sapphire substrate material is. However, in 2012, the first time the sapphire substrate program on the status of the sapphire substrate has launched a challenge.

The most threatening challenge from the silicon substrate, January 12, 2012, OSRAM promotion in the silicon 150mm successfully grow GaN extension, cut into 1mm - in 350mA brightness can reach 140lm, the project is partly funded by the German Federal Ministry of education and research of the "Si Gan" special case.

And Toshiba's move faster step, in 2012 12 months, was not involved in the direct selling Toshiba LED package, and the chip is used with the United States Prichard (BridgELux) cooperative growth of LED chip in 8 inch silicon substrate. Toshiba has released a total of four models of the current product specifications, including a a color temperature of 3000K, a 4000K color and two color temperature 5000K LED products. When the typical forward voltage is 2.9V, the 350mA drives the color temperature 5000K, the color rendering index is 70 of the model is TL1F1-NW0 LED, the light efficiency reaches 110lm/W.

Source: OSRAM

Photograph: TOSHIBA

China manufacturer latticepower after years of on the silicon substrate in the field of work, launched in 2012 more than 120lm/W luminous efficiency of silicon based high power LED chip products, the desire for independent intellectual property rights of the domestic chip is a great good news.

Invented in 2012 twelfth major industry information technology China Ministry announced the selection results, latticepower (Jiangxi) Co., Ltd. "GaN / Si LED materials and high power chip technology" project was awarded the invention of major technical information industry, and included in the "Electronic Information Industry Development Fund Project Guide" and enjoy the state power