Hitachi for white LED epitaxial GaN new model

Hitachi Electric Corporation announced the successful development of growth on sapphire substrates with high quality gallium nitride (GaN) thin films GaN model of new production technology, and has started selling.

Through the "product is used as the underlying substrate white LED epitaxy", can greatly improve the production efficiency and the characteristics of LED white LED epitaxy. Therefore, the industry is very competitive white LED manufacturers, the product is expected to become an effective solution to enhance the status of the industry.

In recent years, the white LED with energy-saving, long life and other significant advantages in lighting products to the LCD panel backlight to represent the needs of the rapidly expanding. The basic structure of the white LED epitaxy is that a 10 m thick GaN layer is grown on the sapphire substrate, and then a layer of N thick P thin layer with a thickness of 1 m is formed. In the general production process, all of these crystals were grown by MOVPE method. Although the MOVPE method is suitable for the growth of the active layer which requires the control of the atomic level film thickness, it will take a long time to produce the high quality n type GaN layer with the required thickness. Therefore, the growth rate of the white LED is up to 1 ~ ~ 2 times per day, and how to realize the high efficiency production mode has been a difficult problem to be solved.

In order to solve this problem, the company developed the use of the underlying substrate grown by the MOVPE method of the GaN model. GaN template uses the structure of N type GaN layer grown on sapphire substrate. By using the GaN template, LED manufacturers will no longer need n type GaN buffer layer growth process, the time required for growth will be reduced to about half the original. In addition, the use of the company's production of GaN templates, but also can achieve low resistance and high crystallinity, but also applies to the need for large current high power LED.

Before, the company has developed a self supporting substrate by single crystal GaN laser in purple, and in order to achieve the production, promoted by HVPE method and unique crystal growth technology development. This time, the company by virtue of this unique growth technology, the new development of high-quality GaN model of efficient production technology and equipment, to build a complete production system.

The main features of GaN model,: the growth of technology accumulation in the development process of the GaN self support of the substrate, to achieve a high crystallinity and high surface quality. It has the same low resistance n type GaN buffer layer for high power chip bonding LED. Support for the flat surface of the sapphire substrate and various PSS. Support the development of a diameter of 2 to 6 inch chip (a 8 inch chip is being planned). In addition to the GaN substrate and epitaxial GaN before the development of the company, the new GaN model products, the future will further strengthen and expand the GaN product line, to provide customers a wide range of compound semiconductor materials can meet the demand. At the same time, this year's May 13 ~ 16 days, the company will participate in the New York City, the United States organized by the CS Mantech, GaN model for the description of the show.