Deep UV disinfection LED strong medical research and development into a new hot spot

Deep ultraviolet light refers to the wavelength of 100 nm to 280 nm light wave, in sterilization, medical, biochemical testing, high-density information storage and secure communications and other areas of great application value. Compared with the mercury lamp UV light source, aluminum gallium nitride (AlGaN) materials based on deep ultraviolet light emitting diodes (LED) have the advantages of firmness, energy saving, long life, mercury free, traditional applications are gradually infiltrated into the lamp. At the same time, the unique advantages of deep UV LED and inspired many new consumer electronic product applications, such as disinfection module, white goods portable water purification system, mobile phone sterilizer, which showed a broad market prospects, after becoming the semiconductor lighting LED, the new focus of research and investment in global LED.

Research Report shows that the future of the LED market may be divided into two parts, part of the general lighting for the visible light LED, and the other is a high-tech innovation featuring deep UV LED. Compared with visible LED, the efficiency and output power of the deep UV LED are generally low. Chinese Semiconductor Institute researcher Zhang Yun believes that in order to improve the AlGaN based deep UV LED low luminous efficiency and low optical power of two major performance bottlenecks fundamentally, emphasis should be on how to break through the low dislocation density AlN and AlGaN core material epitaxy and doping technique, design a high quantum efficiency and high light the extraction efficiency of the LED device structure, and the development of the high reliability chip preparation technology and light bead packaging technology.

As the domestic aluminum gallium nitride base important research institutions deep UV LED, China Semiconductor Research Institute of semiconductor lighting R & D center in support of the National 863 plan, the accumulation in the preparation process, the epitaxial growth and doping of gallium aluminum nitride materials and deep UV LED chip has many years of research and development experience, has successfully the luminescence wavelength from 260 nm to 300 nm deep UV LED chip series, and has the capability of industrialization production.

Researchers in the applied physics letters, published a paper pointed out that the use of nano ball technology to produce nano patterned substrate, not only improve the quality of the material, but also improve the efficiency of light extraction. 280 nm deep UV LED at the current of 20 mA, the optical output power of more than 3 MW, the external quantum efficiency and optical output power compared with the traditional planar substrate to improve nearly 1 times. They also optimize the packaging process, so that after the packaging of deep UV LED beads to achieve more than 4 MW of optical output power. 2013, the Chinese Academy of Sciences Institute of semiconductors deep UV LED key materials and device fabrication technology was identified as the leading domestic and international advanced.