Crystal electric ALLOS technology authorized silicon substrate LED is expected to mass production

LED chip large crystal electric in March 11th issued a press release pointed out that the crystal power ALLOS Semiconductors technology to obtain the GaN-on-Si technology license and successfully completed the first phase of technology transfer.

ALLOS and Semiconductors, a German engineering consultancy, today announced that GaN-on-Si has been licensed and successfully completed the first phase of technology transfer. The technology transfer plan is to build a GaN-on-Si epitaxial process of 150mm and 200mm with excellent homogeneity in the crystal epitaxial machine. In the process of technology transfer, EPISTAR has fully grasp the GaN-on-Si technology and integrating with the original advanced LED technology, through the transfer of proprietary technology and the GaN-on-Si technology engineering personnel training, to ensure the further development of this independent crystal electric technology. GaN-on-Si epitaxial technology has also opened up the possibility of using silicon wafer foundry to produce epitaxial wafers.

Prior to the cooperation with ALLOS Semiconductors, the Semiconductors substrate provided by the crystal through the AZZURRO, has accumulated a wealth of experience in this technology. ALLOS at the end of last year (2014) to obtain AZZURRO Semiconductors technology, proprietary technology and patents, crystal electricity through the ALLOS to carry out related consulting and customized development services. Use this opportunity to acquire technology of crystal electric decided to accelerate the pace of development, general manager Zhou Mingjun said: "this can transfer technology to obtain technical ability to complete in a short period of time, in terms of time and cost will be able to effect. General manager Zhou also further from the company's strategic side, said: crystal has been concerned about the GaN-on-Si technology, because of its advantages in a number of applications, but also the size of the substrate is expected to reduce manufacturing costs. "

At the same time, CTO is also the founder of ALLOS Dr. Atsushi Nishikawa said: "we combine matching approach and technology transfer authorization, to assist the LED factory and high power semiconductor industry successfully launched its own GaN-on-Si program, don't try to catch up with those who invest a lot of money and time in the technology industry pioneer, let our service customers can in a few months to get the most advanced technology. "He thinks of ALLOS's customers, if the ALLOS provides proven GaN-on-Si technology platform and proprietary technology, not only saves development cost and time to get into the market, but also can reduce the risk of intellectual property rights.

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