CREE launches GaN based solid state amplifier platform

CREE (Nasdaq: CREE) announced the introduction of innovative power and bandwidth performance of the new Ku band 40V, 0.25 micron silicon carbide substrate gallium nitride based (GaN-on-SiC) bare chip product line. The innovative product family enables solid-state amplifiers instead of traveling wave tubes to improve efficiency and reliability.

CREE wireless RF sales and marketing director Tom Dekker said: "compared with the GaAs transistor and the frequency range of CREE 0.25 micron GaN HEMT bare chip product series has a more significant gain, efficiency and power density. Higher gain can achieve a more efficient integrated power scheme, thereby enhancing the performance of solid state power amplifier in C band, X band and Ku band. "

Major market applications include marine radar, medical imaging, industrial and satellite communications and other fields. Compared with GaAs transistors, the solid-state amplifier has higher reliability, lower cost and better efficiency, and can reduce the size of power amplifier and power supply. High efficiency of GaN HEMT power amplifier can effectively reduce transmitter power consumption.

CREE wireless business development manager Ray PengELly said: "the performance of CREE 0.25 micron GaN HEMT products have a breakthrough, improve efficiency and bandwidth achieve transistor performance level GaAs transistor can not reach. For example, the switching mode high power amplifier (HPA) can provide more than 80% power added efficiency in the microwave frequency range. When the power is more than 10W, the instantaneous bandwidth of GaN HEMT HPA can reach 6 to 18GHz. 0.25 micron GaN products provide superior performance so that system engineers can redesign GaAs transistors and traveling wave tubes. "

In the 40V drain voltage and Ku band operating frequency range, the rated output power of the new GaN HEMT bare chip products CGHV1J006D, CGHV1J025D and CGHV1J070D were 6W, 25W and 70W, respectively.

A new silicon carbide substrate Gan bare chip products using CREE patented technology, at the same time can be extended to the model of large signal device with Advanced Design System and Agilent Co AWR Microwave Office simulation platform is compatible, so the wireless RF design engineers can accurately simulate the RF amplifier circuit is advanced, which can significantly shorten the design cycle and implementation the higher microwave frequency. 0.25 micron silicon carbide substrate gallium nitride HEMT process with industry-leading reliability, and the ability to work under the drain voltage of 40V. When the channel temperature up to 225 degrees Celsius, the average failure time of more than one million hours.

For more details on CREE's new 0.25 micron silicon carbide substrate Gan HEMT bare chip series

About CREE (CREE)

CREE was founded in 1987, is the United States listed companies (1993, NASDAQ: CREE), the leading global manufacturer of famous LED epitaxy, chip, packaging, LED lighting solutions, compound semiconductor materials, power devices and RF integration in the industry and. CREE LED lighting products has the advantage of gallium nitride (GaN) and silicon carbide (SiC) and other aspects of the one and only material technology and advanced light technology, has 1300 U.S. patents, 2900 international patents and nearly 390 patents (including more than China has been authorized in the trial of patent), the CREE LED product is always in the world leading level. CREE lighting class high-power LED, with high light efficiency, color stability, long life and other advantages. CREE to provide customers with high quality, high reliability light-emitting devices, but also to provide customers with complete sets of LED lighting solutions. CREE silicon carbide metal oxide semiconductor field effect transistor switching devices (MOSFET Switch) on resistance temperature coefficient of small, stable, low leakage current, short switching time, and CREE Schottky (Schottky Power silicon power diode Diode) zero reverse recovery current and other characteristics, making CREE SiC power devices is especially suitable for high frequency, high efficiency and high power density and high reliability requirements of power electronic system.