CREE launches 150 mm 4H N silicon carbide epitaxial wafer

LED market leader CREE (Nasdaq: CREE) recently announced the launch of 150 mm 4H N type silicon carbide epitaxial films of high quality and low microtubule. CREE through the introduction of larger diameter epitaxial film, which continues to lead the development of silicon carbide materials market. The latest technology can reduce the cost of equipment, and can use the existing 150 mm equipment process line. The new 150 mm epitaxial wafer has a highly homogeneous epitaxial layer of a thickness of 100 microns and has been ordered.

Silicon carbide is a semiconductor material with high performance, is widely used in lighting, power devices and communication devices in the production of products, including the two luminescence tube (LED), power converter and wireless communication with the RF power transistors etc.. 150 mm single crystal silicon carbide substrate can help reduce costs, improve production, while driving the continued growth of silicon carbide industry.

CREE Product Manager Vijay Dr. Balakrishna said: CREE has a strong production capacity in the field of silicon carbide 100 mm epitaxial wafer. The latest 150 mm technology will further enhance the standard of silicon carbide wafers. CREE's vertical integration capability ensures that it is able to provide customers with a complete solution for high-quality 150 mm silicon carbide epitaxial wafers, and provide a stable supply of electricity to the leading electronics market. "

150 mm 4H N type silicon carbide epitaxial wafer can be limited to start ordering. For more details, please contact Materials_Sales@cree.com.

About CREE (CREE)

CREE was founded in 1987, is the United States listed companies (1993, NASDAQ: CREE), the leading global manufacturer of famous LED epitaxy, chip, packaging, LED lighting solutions, compound semiconductor materials, power devices and RF integration in the industry and. CREE LED lighting products has the advantage of gallium nitride (GaN) and silicon carbide (SiC) and other aspects of the one and only material technology and advanced light technology, has 1300 U.S. patents, 2900 international patents and nearly 390 patents (including more than China has been authorized in the trial of patent), the CREE LED product is always in the world leading level. CREE lighting class high-power LED, with high light efficiency, color stability, long life and other advantages. CREE to provide customers with high quality, high reliability light-emitting devices, but also to provide customers with complete sets of LED lighting solutions. CREE silicon carbide metal oxide semiconductor field effect transistor switching devices (MOSFET Switch) on resistance temperature coefficient of small, stable, low leakage current, short switching time, and CREE Schottky (Schottky Power silicon power diode Diode) zero reverse recovery current and other characteristics, making CREE SiC power devices is especially suitable for high frequency, high efficiency and high power density and high reliability requirements of power electronic system.