CREE launched a new GaN RF MMIC technology to provide lower cost and higher performance for communications and radar systems

High power silicon carbide substrate gallium nitride process to help communications system operators and military systems suppliers to take full advantage of GaN's high efficiency and save operating costs

CREE (Nasdaq: CREE) announced the launch of two new GaN process:, micron and drain voltage of up to 40V and 0.4 G40V4, the maximum drain voltage of 50V G50V3. The new technology increases the operating voltage and RF power density, compared with the traditional technology, can achieve smaller size bare chip and more compact, more efficient amplifier. Two new technologies and CREE by GaN monolithic microwave integrated circuit verification (MMIC) technology are compatible and can be used in the silicon wafer with a full set of passive circuit elements and nonlinear model on 100 mm diameter.

The new technology has been used in research and development and mass production. Through these two new technologies, CREE is able to provide a wide range of services, including a full set of special mask and to promote the rapid development of custom circuits. The G40V4 process can be carried out under the environment of 28V and 40V two operating voltages and 18GHz (RF) power density (FET) of the outer edge of the field effect transistor (6W/mm). The G50V3 process can be carried out under the environment of the radio frequency power density (8W/mm) of the field effect transistor (FET) with a working voltage of less than 50V and 6GHz. The two technology is based on the CREE G28V3 technology. Since it was used in production in 2006, the G28V3 technology with 0.4 micron and operating voltage of 28V is one of the lowest in the field of microwave technology in the industry (there are no more than 9 faults in every 1 billion hours).

CREE estimates that if in a typical three type multi band LTE/4G remote radio communication end (RRH) installed in GaN to replace the traditional transistor technology can reduce the power consumption of up to 20% RRH, which can reduce the operation cost and energy consumption. In addition, the new process can also reduce the initial cost of the system. The high voltage and high efficiency of the GaN process can help to reduce the size of the radiator and the shell, reduce the design complexity of the RF amplifier and reduce the cost of AC to DC and DC to DC converters. In addition, the air is now available to replace the previous large fan cooling system. All these improvements can save up to 10% of the cost of materials, greatly reducing the cost of system acquisition.

Military radar systems have the same advantage. The high efficiency of CREE GaN technology can reduce the power consumption and reduce the maintenance cost, so it can significantly optimize the system life cycle cost. G40V4 and G50V3 process work (channel) as the junction temperature of 225 degrees C, the average life expectancy of more than two million hours (228 years), its superior reliability can significantly reduce the radar system in the working life in the repair and maintenance costs.

CREE wireless radio frequency (RF) and microwave Jim Milligan director said: "the process of our customers need reliable and higher frequency for the advantage and application of GaN in satellite communications, radar and electronic warfare market, higher than the 6GHz field, we believe that the new G40V4 technology can well meet the needs of customers. At the same time, according to customer demand for low cost solutions GaN, CREE introduced a new working voltage of G50V3 50V technology, can realize the wireless RF output power of excellent cost-effective, to speed up GaN in the communications infrastructure on the cost sensitive market in the field of PU and GaN, are now able to performance advantages in these areas provide unmatched silicon LDMOS. "

CREE power and radio frequency (RF), vice president and general manager, Dr. Cengiz Balkas said: the new process of higher operating voltage and higher efficiency is the key to rapid popularity. If GaN is to be used on the LTE/4G macrocell base station, communications operators can save more than $2 billion a year in energy costs. Fortunately, the communications industry has begun to recognize these potential savings. CREE plans to offer more than 7500 megawatts of GaN transistor telecommunication base station within the year. "

Under the operating voltage and 18GHz of the 40V, the CREE G40V4 process can provide up to 6W/mm PSAT; under the condition of 10GHz, the typical device characteristics can achieve 65% power added efficiency (PAE) and 12dB small signal gain. Under the operating voltage and 6GHz condition of 50V, the G50V3 technology can provide up to 8W/mm PSAT, the typical device characteristics can achieve 70% power added efficiency (PAE) and 12dB small signal gain under the condition of 3.5GHz. The highest temperature of the two channel GaN process was 225 degrees C, the average life of more than two million hours (2E6). In addition, CREE released the MMIC design kit, the kit has CREE patent technology scalable nonlinear HEMT model, suitable for Agilent Advanced (ADS) Design System Microwave Office simulation platform and AWR. The design kit also includes a set of resistors, capacitors, spiral inductors and the substrate through the hole, including passive components, can be used to simulate the integrity of the MMIC performance and significantly shorten the design cycle.

For more information on new process and processing services, please visit: www.cree.com/rf.

About CREE (CREE)

CREE was founded in 1987, is the United States listed companies (1993, NASDAQ: CREE), the leading global manufacturer of famous LED epitaxy, chip, packaging, LED lighting solutions, compound semiconductor materials, power devices and RF integration in the industry and. CREE LED lighting products are reflected in the advantages of gallium nitride (GaN) and silicon carbide (SiC) and other unique materials