CREE launched S band GaN devices to maximize the efficiency of radar applications

New 60W GaN Psat HEMT helps reduce military and civilian radar systems

For high power amplifier size, weight and heat dissipation requirements

CREE (Nasdaq: CREE) announced the launch of military and commercial S band radar can be used in efficient GaN HEMT transistor. The new S band GaN HEMT transistor with a rated power of 60W, frequency of 3.1 to 3.5GHz, is capable of providing superior drain efficiency (close to 70%) compared with conventional Si or GaAs MESFET devices. At the same time, the combination of high efficiency and high power density helps to minimize the requirement of heat dissipation and reduce the size and weight of the commercial radar system applications.

CREE wireless radio frequency (RF) and microwave Jim Milligan director said: "the new S band GaN HEMT devices introduced a wealth of CREE high S band GaN transistor and monolithic microwave integrated circuit (MMIC) series of products, so as to customers in the commercial application of radar system for high power amplifier circuit in providing more choice. S band GaN HEMT device with high efficiency rate, extended ability and excellent in pulse signal fidelity, and minimize thermal management needs, which can help the wireless RF design engineers to reduce the size and weight of the radar system, and expand the scope of application and reduce the installation cost. "

CREE CGH35060 GaN HEMT rated pulsed power transistor 28V working voltage is 60W (when the pulse width is 100 microseconds), power gain is 12dB, the drain efficiency of 65%, compared with the traditional silicon LDMOS devices up to 50%. The CGH35060 GaN device has been verified in the design of high power amplifier reference (S band frequency between 3.1 and 3.5GHz). Compared with GaAs and Si technology, CGH35060 also has the characteristics of long pulse, high power performance (less than 0.6dB), excellent signal fidelity and very low power attenuation.

The new GaN HEMT transistor and CREE S band full product series, including CGH31240F/CGH35240F, 240W GaN comprehensive HEMT devices (2.7 - 2.9GHz / 3.1 - 3.5GHz) and CMPA2735075F two package GaN HEMT monolithic microwave integrated circuit (MMIC).

For more information about the latest S band GaN HEMT devices, please visit: www.cree.com.

About CREE (CREE)

CREE was founded in 1987, is the United States listed companies (1993, NASDAQ: CREE), the leading global manufacturer of famous LED epitaxy, chip, packaging, LED lighting solutions, compound semiconductor materials, power devices and RF integration in the industry and. CREE LED lighting products has the advantage of gallium nitride (GaN) and silicon carbide (SiC) and other aspects of the one and only material technology and advanced light technology, has 1300 U.S. patents, 2900 international patents and nearly 390 patents (including more than China has been authorized in the trial of patent), the CREE LED product is always in the world leading level. CREE lighting class high-power LED, with high light efficiency, color stability, long life and other advantages. CREE to provide customers with high quality, high reliability light-emitting devices, but also to provide customers with complete sets of LED lighting solutions. CREE silicon carbide metal oxide semiconductor field effect transistor switching devices (MOSFET Switch) on resistance temperature coefficient of small, stable, low leakage current, short switching time, and CREE Schottky (Schottky Power silicon power diode Diode) zero reverse recovery current and other characteristics, making CREE SiC power devices is especially suitable for high frequency, high efficiency and high power density and high reliability requirements of power electronic system.