CREE 50A silicon carbide power device technology breakthroughs, for more high-power applications bring more efficient and lower cost

CREE high power silicon carbide MOSFET devices, including 1700V silicon carbide MOSFET devices, reduce the cost of power electronics systems and improve energy efficiency

Silicon carbide power device market leader CREE (Nasdaq: CREE) will redefine the performance and energy efficiency of high-power applications, the introduction of a new product series - 50A silicon carbide power devices. The product range includes not only the industry's first 1700V Z-FET silicon carbide MOSFET devices, including 1200V Z-FET SiC MOSFET device and three Z-Rec r SiC Schottky diode, can provide a record of the energy efficiency and has lower cost than traditional technology, to create a new generation of power system.

CREE 50A silicon carbide power devices in the form of bare chip, for solar power inverter, uninterruptible power supply equipment and motor drives and other high-power module design. Such devices with smaller size, lower material cost, and higher efficiency enable the power electronics engineer to set new standards for the cost of the system.

CREE vice president and general manager of Cengiz Balkas RF power and said: "CREE is through continuous innovation, and CREE in the field of original material technology, silicon carbide wafer process and device design, which makes this technology breakthrough to realize. The large size of the chip can achieve more advantages, the SiC MOSFET device can use the application in high power applications, low silicon IGBT devices which can replace the traditional applications in the field of high power and high voltage. "

The series of high rated SiC devices in silicon carbide technology CREE launched to keep the record first tradition, such as the industry's first 1200V SiC MOSFET device and the first mass production of 1200V and 1700V SiC Schottky diode.

CREE new product family 50A silicon carbide devices include 40m 1700V MOSFET devices, 25m 1200V MOSFET devices as well as 50A/1700V, 50A/1200V and 50A/650V Schottky diodes. The product line is now available in the sample and basic data sheet, is expected to achieve mass production in autumn of 2012. For more samples and further understanding of CREE SiC power devices, please visit: www.cree.com/power.