"11th Five-Year 863" plan "based on the SiC substrate high-power GaN based LED manufacturing technology" subject by acceptance

Support 11th Five-Year "863 Plan" semiconductor lighting project "major projects, Shandong Huaguang optoelectronics Co. Ltd. the" high power GaN based LED based on SiC substrate manufacturing technology "project has made an important breakthrough, recently successfully passed the acceptance.

The subject focuses on SiC substrate nucleation layer growth, substrate removal, mirror preparation, surface roughening, ohmic electrode preparation and chip cutting technology in EBL layer Al graded composition, asymmetric quantum barrier, polarization suppression technology to achieve a breakthrough and innovation. Research and development of SiC based high power LED chip, optical output power of more than 350mW, after the white light effect of 109lm/W. At present, the project has been carried out on the LED unit for small batch production, product quality and stability.

Smooth implementation of the project, will further promote the development of China's semiconductor lighting technology based on SiC substrate, which lay a good foundation for narrowing the gap with foreign high-end products.