The Chinese Academy of Sciences transmission of good news: the key technology of LED material and chip breakthrough

In the "11th Five-Year" National 863 plan of new materials in the field of project support, undertaken by the Institute of semiconductor China Academy of Sciences "key technology of high efficiency nitride LED and chip innovation team project has recently passed the acceptance.

According to the great demand of energy saving and emission reduction China, "key technology of efficient nitride LED and chip innovation team built from semiconductor lighting major equipment, material epitaxy, chip development to the high power chip testing and analysis of the complete flexible semiconductor lighting technology platform, with R & D capabilities and engineering demonstration ability flexible.

The innovation team in the first breakthrough in key technologies to China nitride based semiconductor epitaxial growth and doping, verification, design and mechanism of chip testing and packaging structure, more than 150lm/w LED to realize efficient luminescence; deep UV U-VLED devices China first 300nm fluorescent light under room temperature were prepared successfully, and realized power of milliwatt output; development of Chinese first 48 MOCVD prototype is developed. After the third party testing, Epitaxial Gallium nitride material, the performance indicators to achieve the same level of international MOCVD equipment.

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