On January 10, Shanghai Xinyuanji announced a new breakthrough in Micro LED micro-display, successfully overcoming the 7.5μm pixel pitch chip array bonding process and realizing a 0.39-inch single-color Micro LED micro-display video display.
According to reports, the display module produced this time has a pixel pitch of 7.5μm, a resolution of 1024*768, and a display area of 0.39 inches. The CMOS driver chip is provided by Beijing Digital Optical Core Integrated Circuit Design Co., Ltd. The module has excellent photoelectric parameters and display effects.
According to data, Xinyuanji was founded in 2014. It is a company that independently develops, designs, and produces sapphire-based GaN high-end thin film structure chips and Mini/Micro LED chips based on third-generation semiconductor gallium nitride (GaN) materials. Its products are mainly used in industrial curing, AR/VR, smart watches, TVs, outdoor displays, and special lighting.
It is reported that Xinyuanji officially entered the Micro LED field in October 2021. In January 2022, it successively developed 16*27 micron thin-film flip-chip Micro LED chips for direct display and pitch 8μm Micro LED chip arrays suitable for micro displays.
On July 27, 2022, Xinyuanji broke through the key process of pixel pitch less than 4μm, and successfully lit up a 0.12 inch, pitch 3.75μm Micro LED chip array suitable for AR glasses display.
On August 29 of the same year, Xinyuanji successfully lit up an InGaN-based red light pitch 8μm Micro LED chip array suitable for micro-displays. So far, Xinyuanji has completed the three monochromatic light sources of GRB required for the full-color microdisplay chip solution, and all of them are based on InGaN material systems.
On October 13 of the same year, Xinyuanji successfully realized a 0.41-inch single-color Micro LED micro-display video display using existing OLED drive technology.
It is worth mentioning that while Xinyuanji continues to make breakthroughs in Micro LED micro-display technology, it is also accelerating the construction of third-generation semiconductor gallium nitride projects.
On November 20, 2020, Xinyuanji’s third-generation semiconductor gallium nitride project signed a contract with Anhui Chizhou High-tech Zone. The project plans to cover an area of about 100 acres and will be constructed in two phases. Among them, the first phase investment is 200 million yuan to build a GaN-based DPSS substrate production line, a UVA 365nm chip production line, and supporting facilities; the second phase investment is 400 million yuan to build an administrative and production integrated factory and supporting facilities.
With its advantages in Micro LED and other fields, Xinyuanji has won the favor of capital. At present, Xinyuanji has received over 100 million yuan in investment from China Micro Semiconductor, Shanghai Chuangtu, Zhangjiang Science and Technology Investment, Zhangjiang Hi-Tech, Pudong Science and Technology, and Shanghai Free Trade Zone Fund. (Compiled by LEDinside Mia)
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